New method to determine the carbon concentration in silicon
- 8 December 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (23) , 1617-1619
- https://doi.org/10.1063/1.97246
Abstract
Silicon samples subjected to a CF4 reactive ion etch exhibit the G‐line luminescence known from photoluminescence studies of irradiation damage in Si. We investigate the mechanism of low‐energy carbon implantation by CF4 plasma and find a linear dependence of the G‐line luminescence intensity on the substitutional carbon concentration in the samples. By a standardized etching and photoluminescence procedure, we expect to determine carbon concentrations two orders of magnitude smaller than the ASTM infrared absorption method.Keywords
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