Low-temperature layer splitting of (100) GaAs by He+H coimplantation and direct wafer bonding
- 14 April 2003
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 82 (15) , 2413-2415
- https://doi.org/10.1063/1.1567045
Abstract
The present letter introduces a low-temperature GaAs layer splitting approach by He+H coimplantation which—in combination with direct wafer bonding—enables monolithic integration of GaAs with different substrates. The influence of He+H coimplantation on blistering and layer splitting of GaAs is studied and the optimum coimplantation conditions are determined. Thin GaAs layers are transferred onto Si after bonding of He+H coimplanted GaAs and Si substrates via a spin-on glass intermediate layer and subsequent annealing at only 225 °C for 14 h. Cross-sectional transmission electron microscopy investigations show a high quality of the GaAs/SOG bonding interface.Keywords
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