Substitutionality of Te- and Sn-relatedDXcenters inAlxGa1−xAs

The lattice locations of Te and Sn atoms forming DX centers in ${\mathrm{Al}}_{\mathit{x}}$ ${\mathrm{Ga}}_{1\mathrm{-}\mathit{x}}$As were determined by particle-induced x-ray emission and ion-beam-channeling methods. The Te atoms were found to be in the As substitutional sites while the Sn atoms were in the Ga(Al) sites. No off-center displacement of Te and Sn larger than 0.14 Å from the substitutional sites was observed in either system.