Scanning Tunneling Microscopy Identification of Atomic-Scale Intermixing on Si(100) at Submonolayer Ge Coverages
- 15 May 2000
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 84 (20) , 4645-4648
- https://doi.org/10.1103/physrevlett.84.4645
Abstract
The positions of Ge atoms intermixed in the Si(100) surface at very low concentration are identified using empty-state imaging in scanning tunneling microscopy. A measurable degree of place exchange occurs at temperatures as low as 330 K. Contrary to earlier conclusions, good differentiation between Si atoms and Ge atoms can be achieved by proper imaging conditions.Keywords
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