Vapor phase epitaxial growth of high purity InGaAs, InP and InGaAs/InP multilayer structures
- 1 December 1985
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 73 (3) , 523-528
- https://doi.org/10.1016/0022-0248(85)90016-8
Abstract
No abstract availableKeywords
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