Effect of interface traps related to mobile charges on silicon n-channel metal/oxide/semiconductor field effect transistors determined by a charge-temperature technique
- 1 September 1986
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 142 (2) , 183-191
- https://doi.org/10.1016/0040-6090(86)90003-9
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
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