Hydrogen passivation and reactivation of thermal donors in silicon
- 15 February 1993
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 47 (7) , 4037-4040
- https://doi.org/10.1103/physrevb.47.4037
Abstract
The dissociation of individual thermal-donor–hydrogen (TD-H) complexes is studied by means of infrared absorption, capacitance-voltage profiling, and deep-level transient spectroscopy. Contrary to earlier reports we determine the following dissociation energies: (TD1-H)=1.90±0.20 eV, (TD2-H)=1.67±0.28 eV, and for a mixture of different TD complexes (ΣTD-H)=1.61±0.15 eV. Our results ask for different core structures for TD1 and TDn with n≥2.
Keywords
This publication has 14 references indexed in Scilit:
- Observation of five additional thermal donor species TD12 to TD16 and of regrowth of thermal donors at initial stages of the new oxygen donor formation in Czochralski-grown siliconPhysical Review B, 1992
- Theoretical studies on the core structure of the 450 °C oxygen thermal donors in siliconPhysical Review B, 1992
- Negative-charge state of hydrogen in siliconPhysical Review B, 1990
- Evidence for the existence of a negatively charged hydrogen species in plasma-treated n-type SiApplied Physics Letters, 1990
- Thermal double donors in siliconApplied Physics A, 1989
- Introduction to defect bistabilityApplied Physics A, 1989
- Interaction of hydrogen and thermal donor defects in siliconApplied Physics Letters, 1987
- Hydrogen passivation of the oxygen-related thermal-donor defect in siliconApplied Physics Letters, 1986
- Electrical and Optical Characterization of Thermal Donors in SiliconPhysica Status Solidi (a), 1986
- Model for the Electronic Structure of Amorphous SemiconductorsPhysical Review Letters, 1975