Impurity-related photoluminescence from silicon at room temperature
- 15 October 1994
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 50 (15) , 10661-10665
- https://doi.org/10.1103/physrevb.50.10661
Abstract
We report results for photoluminescence studies of an impurity-related defect system in 450 °C annealed Czochralski-grown silicon resulting in optical emission with a wavelength near 1.7 μm. The photoluminescence emission is found to have a significant intensity that persists to room temperature. The external quantum efficiency at 300 K is measured to be approximately 2.5×.
Keywords
This publication has 16 references indexed in Scilit:
- Room-temperature 1.3 μm electroluminescence from strained Si1−xGex/Si quantum wellsApplied Physics Letters, 1992
- Visible electroluminescence from porous siliconApplied Physics Letters, 1992
- Electroluminescence from sulfur impurities in a p-n junction formed in epitaxial siliconApplied Physics Letters, 1989
- Structure of the 0.767-eV oxygen-carbon luminescence defect in 450 °C thermally annealed Czochralski-grown siliconPhysical Review B, 1989
- The optical properties of luminescence centres in siliconPhysics Reports, 1989
- Radiative decay of excitons bound to chalcogen-related isoelectronic impurity complexes in siliconPhysical Review B, 1988
- Concentration dependence of optical emission from sulfur-doped crystalline siliconApplied Physics Letters, 1987
- Optical emission at 1.32 μm from sulfur-doped crystalline siliconApplied Physics Letters, 1986
- Photon generation in forward-biased silicon p-n junctionsIEEE Electron Device Letters, 1983
- Radiative Recombination in Silicon p‐n JunctionsPhysica Status Solidi (b), 1969