Recent developments in metalorganic precursors for metalorganic chemical vapour deposition
- 1 January 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 146 (1-4) , 503-510
- https://doi.org/10.1016/0022-0248(94)00469-2
Abstract
No abstract availableKeywords
This publication has 35 references indexed in Scilit:
- Growth of aluminium films by low pressure chemical vapour deposition using tritertiarybutylaluminiumJournal of Crystal Growth, 1994
- Growth of ZnO by MOCVD using alkylzinc alkoxides as single-source precursorsJournal of Materials Chemistry, 1994
- Investigations into the growth of AIN by MOCVD using trimethylsilylazide as nitrogen sourceJournal of Materials Chemistry, 1994
- Metal CVD for microelectronic applications: An examination of surface chemistry and kineticsCritical Reviews in Solid State and Materials Sciences, 1993
- MOVPE of AlN and GaN by using novel precursorsJournal of Crystal Growth, 1991
- The use of heterocyclic compounds in the organometallic chemical vapour deposition of epitaxial ZnS, ZnSe and ZnOJournal of Crystal Growth, 1984
- Vapor Phase Deposition of Aluminum Film on Quartz SubstrateJournal of the Electrochemical Society, 1983
- Aluminum Nitride Epitaxially Grown on Silicon: Orientation RelationshipsJapanese Journal of Applied Physics, 1981
- Epitaxial Growth of Aluminum Nitride on Sapphire Using Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1981
- 341. Alkoxy-, thio-, and amino-derivatives of methylzincJournal of the Chemical Society, 1965