Photoluminescence and doping in liquid phase epitaxial GaAs1−xSbx
- 1 June 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (6) , 3422-3426
- https://doi.org/10.1063/1.332457
Abstract
Undoped, Ge‐, and Sn‐doped GaAs1−xSbx grown by liquid phase epitaxy have been investigated by means of photoluminescence. Four main peaks have been observed at 11 °K in the undoped samples. One of them K1 at 1.513 eV in GaAs and the two, K2 and K3, at 25 and 62 meV, respectively, below the band gap energy show an evolution with x parallel to the band gap variation. The remaining one at 1.31 eV does not change appreciably with the Sb content.This publication has 39 references indexed in Scilit:
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