SiGe HBTs and HFETs

This publication has 32 references indexed in Scilit:

• Growth of 100 GHz SiGe-Heterobipolar Transistor (HBT) Structures
  Japanese Journal of Applied Physics, 1994
• Challenges for a Si/Ge heterodevice technology
  Microelectronic Engineering, 1994
• The influence of emitter-base junction design on collector saturation current, ideality factor, Early voltage, and device switching speed of Si/SiGe HBT's
  IEEE Transactions on Electron Devices, 1994
• Electron transport properties of a strained Si layer on a relaxed Si1−xGex substrate by Monte Carlo simulation
  Applied Physics Letters, 1993
• High-performance Si/SiGe heterojunction bipolar transistors grown by molecular-beam epitaxy
  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
• p -type SiGe channel modulation doped field-effect transistors with post-evaporation patterned submicrometre Schottky gates
  Electronics Letters, 1993
• The Backside Pulse Doped Channel Heterostructure Field-Effect Transistor: Design, DC, and RF Performance
  Japanese Journal of Applied Physics, 1993
• The influence of MBE-layer design on the high frequency performance of Si/SiGe HBTs
  Microelectronic Engineering, 1992
• Dc characteristics and stability behaviour of high-speed Si/SiGe HBTs undoped SiGe spacer between base and collector
  Electronics Letters, 1992
• Noise characterisation of Si/SiGe heterojunction bipolar transistors at microwave frequencies
  Electronics Letters, 1992