Selenium and zinc doping in Ga0.5In0.5P and (Al0.5Ga0.5)0.5In0.5P grown by metalorganic chemical vapor deposition

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Abstract
Electrical properties of Se‐ and Zn‐doped Ga0.5In0.5P and (Al0.5Ga0.5)0.5In0.5P grown by atmospheric pressure metalorganic chemical vapor deposition under a wide range of growth conditions were investigated using van der Pauw–Hall measurements at room temperature. The dopants were hydrogen selenide and dimethylzinc. The samples were prepared so that parasitic conduction in the GaAs substrate just adjacent to the ternary or quaternary layers could be eliminated from the Hall measurement. The carrier concentration of GaInP and AlGaInP increased as the 0.8±0.1th power of the feed amount of dopants for both conductivity types. At a growth temperature around 680 °C, the hole concentration tended to saturate near the 1018 cm−3 level as the amount of dimethylzinc being fed increased. The carrier concentration decreased with increasing growth temperature, with apparent activation energies of 0.95 eV for Se doping and 1.9 eV for Zn doping. The group‐V to group‐III feed ratio had a weak influence on the carrier concentration. On the other hand, the Hall mobility of the layers grown under the various growth conditions remained almost constant: the electron mobilities of Se‐Ga0.5In0.5P and Se‐(Al0.5Ga0.5)0.5In0.5P within the carrier concentration range of 1017 <n18 cm−3 were 950–700 and ∼100 cm2/V s, respectively. The hole mobilities of Zn‐Ga0.5In0.5P and Zn‐(Al0.5Ga0.5)0.5In0.5P within the carrier concentration range of 1017 <p18 cm−3 were ∼34 and ∼16 cm2/V s, respectively.