Fabrication and Electrical Characteristics of Single Electron Tunneling Devices Based on Si Quantum Dots Prepared by Plasma Processing
- 1 June 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (6S)
- https://doi.org/10.1143/jjap.36.4038
Abstract
This paper presents results on the fabrication of single electron tunneling devices using silicon nanocrystals. We prepare silicon nanocrystals of uniform particle size by very-high-frequency plasma processing and deposit them on a poly-silicon electrode structure having a very small inter-electrode separation of 26–70 nm. Current-voltage (I–V) characteristics show Coulomb blockade and Coulomb staircase at 77 K. For very narrow electrode separation, Coulomb staircase appears in I-V characteristics even at room temperature.Keywords
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