THE DEFECT STRUCTURE OF ION-IMPLANTED AlxGa1−xAs/GaAs SUPERLATFICES
- 1 January 1985
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Implantation disordering of AlxGa1−xAs superlatticesApplied Physics Letters, 1985
- Depth profile and thermal annealing behavior of Bi implanted into an Al/Ti bilayer structureJournal of Applied Physics, 1985
- Disorder of an AlxGa1−xAs-GaAs superlattice by donor diffusionApplied Physics Letters, 1984
- Be-implantation doping of GaAsxP1−x/GaP strained-layer superlatticesApplied Physics Letters, 1984
- Disorder of an AlAs-GaAs superlattice by silicon implantationApplied Physics Letters, 1982
- A Monte Carlo computer program for the transport of energetic ions in amorphous targetsNuclear Instruments and Methods, 1980
- Semiconductor superlattices by MBE and their characterizationProgress in Crystal Growth and Characterization, 1979
- Interdiffusion between GaAs and AlAsApplied Physics Letters, 1976
- X-ray study of AlxGa1−xAs epitaxial layersPhysica Status Solidi (a), 1975
- Infrared Reflection Spectra ofMixed CrystalsPhysical Review B, 1970