Surface Damage in GaInAs/GaInAsP/InP Wire Structures Prepared by Substrate-Potential-Controlled Reactive Ion Beam Etching

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Abstract
We investigated photoluminescence intensity dependence on the width of GaInAs/GaInAsP/InP wire structures prepared by substrate-potential-controlled reactive ion beam etching. As a result, the sidewall recombination velocity was estimated to be 2.5 ×103 cm/s under a low excitation power of approximately 1 W/cm2 (Ar+-ion laser, λ=514.5 nm) at 77 K, and was almost the same as that fabricated by wet chemical etching.