Electron paramagnetic resonance study on the annealing behavior of vacuum deposited amorphous silicon on crystalline silicon

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Abstract
Structure of amorphous silicon (a‐Si) vacuum deposited on single‐crystal (100) silicon (c‐Si) with and without clean surfaces achieved by ion sputtering and annealing has been examined by using electron paramagnetic resonance (EPR) and transmission electron microscopy (TEM) as a function of annealing temperature. Annealing behavior of EPR signal can be explained well on the basis of TEM observation that there are void networks in a‐Si film deposited on c‐Si with native oxide but no such structure in a‐Si film on c‐Si with clean surface. Structure of a‐Si, where solid phase epitaxial growth occurs at a high rate, is compared with that of ion bombarded a‐Si.