Lateral correlation in mesoscopic structures on the silicon (001) surface determined by grating x-ray diffuse scattering
- 15 February 1996
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 53 (8) , R4237-R4240
- https://doi.org/10.1103/physrevb.53.r4237
Abstract
High-resolution x-ray-diffraction study from a mesoscopic scale grating surface of Si (001) reveals a diffuse-scattering peak superimposed on each grating superlattice peak. It is shown that the diffuse scattering arises from a correlated size imhomogeneity produced during the oxidation and fabrication processes. A simple two-level model is presented to explain the experimental data. It provides a quantitative way to characterize the imperfections in a large array of mesoscopic structures.Keywords
This publication has 14 references indexed in Scilit:
- Elastic strains in GaAs/AlAs quantum dots studied by high-resolution x-ray diffractionPhysical Review B, 1995
- X-ray diffraction from laterally structured surfaces: Total external reflectionPhysical Review B, 1995
- Structural study of a Si(001) grating surface by white beam x-ray Laue photographyApplied Physics Letters, 1994
- X-ray diffraction from laterally structured surfaces: Crystal truncation rodsJournal of Applied Physics, 1994
- Interaction of a relaxing system with a dynamical environmentPhysical Review E, 1993
- High resolution x-ray diffraction of periodic surface gratingsApplied Physics Letters, 1993
- X-ray diffraction reciprocal space mapping of a GaAs surface gratingApplied Physics Letters, 1993
- X-Ray Diffraction from Laterally Structured Surfaces: Total External Reflection and Grating Truncation RodsEurophysics Letters, 1992
- X-ray diffraction from corrugated crystalline surfaces and interfacesApplied Physics Letters, 1990
- X-ray Bragg diffraction on periodic surface gratingsApplied Physics A, 1990