Use of gas as low-k interlayer dielectric in LSI's: Demonstration of feasibility
- 1 January 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 44 (11) , 1965-1971
- https://doi.org/10.1109/16.641367
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- NURA: a feasible, gas-dielectric interconnect processPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A planarized multilevel interconnect scheme with embedded low-dielectric-constant polymers for sub-quarter-micron applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Highly porous interlayer dielectric for interconnect capacitance reductionPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A high performance MOSFET design with highly controllable gate length and low RC delay multilevel interconnects technology for high speed logic devicesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Performance trends in high-end processorsProceedings of the IEEE, 1995
- Electrical and Magnetic PropertiesPublished by Springer Nature ,1982
- Voltage breakdown between closely spaced electrodes over polymeric insulator surfaces in airJournal of Applied Physics, 1982