Investigation of the type inversion phenomena: resistivity and carrier mobility in the space charge region and electrical neutral bulk in neutron irradiated silicon p/sup +/-n junction detectors
- 1 August 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 40 (4) , 367-375
- https://doi.org/10.1109/23.256582
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Neutron-induced radiation damage in silicon detectorsIEEE Transactions on Nuclear Science, 1992
- A summary review of displacement damage from high energy radiation in silicon semiconductors and semiconductor devicesIEEE Transactions on Nuclear Science, 1992
- Effects of fast neutron radiation on the electrical properties of silicon detectorsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1991
- Studies of frequency dependent C-V characteristics of neutron irradiated p/sup +/-n silicon detectorsIEEE Transactions on Nuclear Science, 1991
- Nature of the Defect Determining the Fermi Level Stabilization in Irradiated SiliconPhysica Status Solidi (a), 1982
- Nature of Bombardment Damage and Energy Levels in SemiconductorsJournal of Applied Physics, 1959
- Disordered Regions in Semiconductors Bombarded by Fast NeutronsJournal of Applied Physics, 1959