Silicon migration during MOVPE of AlGaAs/GaAs laser structures
- 31 December 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 93 (1-4) , 650-655
- https://doi.org/10.1016/0022-0248(88)90598-2
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Silicon doping using disilane in low-pressure OMVPE of GaAsJournal of Crystal Growth, 1987
- Silicon migration during MBE growth of doped (A1, Ga)As filmsApplied Physics A, 1986
- A Study of Silicon Incorporation in GaAs MOCVD LayersJournal of the Electrochemical Society, 1985
- Effects of substrate temperatures on the doping profiles of Si in selectively doped AlGaAs/GaAs/AlGaAs double-heterojunction structuresApplied Physics Letters, 1985
- Doping effects in AlGaAsJournal of Vacuum Science & Technology B, 1985
- Factors influencing doping control and abrupt metallurgical transitions during atmospheric pressure MOVPE growth of AlGaAs and GaAsJournal of Crystal Growth, 1984
- Disilane: A new silicon doping source in metalorganic chemical vapor deposition of GaAsApplied Physics Letters, 1984
- H2Se “memory effects” upon doping profiles in GaAs grown by metalorganic chemical vapor deposition (MO-CVD)Journal of Electronic Materials, 1984
- Unexpectedly high energy photoluminescence of highly Si doped GaAs grown by MOVPEJournal of Crystal Growth, 1982
- Silicon and germanium doping of epitaxial gallium arsenide grown by the trimethylgallium-arsine methodJournal of Crystal Growth, 1979