High-temperature mobility of puren-type InP epitaxial layers
- 15 September 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 36 (8) , 4388-4393
- https://doi.org/10.1103/physrevb.36.4388
Abstract
High-purity epitaxial n-type InP thin layers give usually a reduced room-temperature Hall mobility compared to both bulk material and theoretical expectations. This effect occurs despite high low-temperature mobility, and is interpreted as due to a residual deep-donor center which acts as a strong scatterer and provides the additional electronic excitation observed at high T. A binding energy of 160 meV is found to be consistent with both the free-electron concentration and the computed Hall mobility.Keywords
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