Growth rate effects on the size, composition and optical properties of InAs/GaAs quantum dots grown by molecular beam epitaxy
- 1 July 2001
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 227-228, 1000-1004
- https://doi.org/10.1016/s0022-0248(01)00967-8
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Epitaxial growth kinetics with interacting coherent islandsPhysical Review B, 1999
- Quantum dot resonant cavity light emitting diodeoperating near 1300 nmElectronics Letters, 1999
- 1.3 µm Room Temperature Emission from InAs/GaAs Self-Assembled Quantum DotsJapanese Journal of Applied Physics, 1999
- Composition of InAs quantum dots on GaAs(001): Direct evidence for (In,Ga)As alloyingPhysical Review B, 1998
- Processes of quantum dot formation in the InAs on GaAs(001) system: A reflectance anisotropy spectroscopy studyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998
- Self-organized quantum dots and quantum dot lasers (invited)Journal of Vacuum Science & Technology A, 1998
- Surface alloying at InAsGaAs interfaces grown on (001) surfaces by molecular beam epitaxySurface Science, 1997
- Spatial distribution of In during the initial stages of growth of InAs on GaAs(001)-c(4 × 4)Surface Science, 1996
- Simulation model for self-ordering of strained islands in molecular-beam epitaxyPhysical Review B, 1996
- 1.3 μm photoluminescence from InGaAs quantum dots on GaAsApplied Physics Letters, 1995