Temperature dependence of the transition from two-dimensional to three-dimensional growth of Ge on (001)Si studied by reflection high-energy electron diffraction
- 4 September 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 77 (10) , 1452-1454
- https://doi.org/10.1063/1.1290720
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Steps and 2D Islands of Double Layer Height in the SiGe(001) SystemPhysical Review Letters, 2000
- Equilibrium size distributions of clusters during strained epitaxial growthMaterials Science and Engineering: B, 1999
- A RHEED study of the transition from two-dimensional to three-dimensional growth in the InAs/GaAs systemSemiconductors, 1997
- In situ ultrahigh vacuum transmission electron microscopy studies of hetero-epitaxial growth I.
Si (001)Ge Surface Science, 1996 - Island formation in Ge/Si epitaxyMaterials Science and Engineering: B, 1995
- Stress-induced layer-by-layer growth of Ge on Si(100)Physical Review B, 1991
- Strain relaxation during the initial stages of growth in Ge/Si(001)Physical Review B, 1991
- A molecular dynamics study of the critical thickness of Ge layers on Si substratesApplied Surface Science, 1991
- Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)Physical Review Letters, 1990
- Growth processes in the initial stages of deposition of Ge films on (100) Si surfaces by GeH4 source molecular beam epitaxyJournal of Crystal Growth, 1990