Active two-terminal devices as local oscillators for low-noise receiver systems at submillimeter wave frequencies
- 1 November 1993
- journal article
- Published by Springer Nature in Electrical Engineering
- Vol. 77 (1) , 15-19
- https://doi.org/10.1007/bf01574916
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Design, fabrication and evaluation of tunnel transit-time diodes for V-band and W-band power generationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- GaAs single-drift flat-profile IMPATT diodes for CW operation at D bandElectronics Letters, 1992
- A CW GaAs TUNNETT Diode Source for 100 GHz and AbovePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1992
- W-band oscillator using ion-implanted InGaAs MESFETsIEEE Microwave and Guided Wave Letters, 1991
- Electron properties in GaAs for the design of MM-wave IMPATTsInternational Journal of Infrared and Millimeter Waves, 1991
- Tunnel transit‐time (tunnett) devices for terahertz sourcesMicrowave and Optical Technology Letters, 1991
- High efficiency and output power from second- and third-harmonic millimeter-wave InP-TED oscillators at frequencies above 170 GHzIEEE Electron Device Letters, 1990
- W-band monolithic oscillator using InAlAs/InGaAs HEMTElectronics Letters, 1990
- Selective etching technology for 94 GHz GaAs IMPATT diodes on diamond heat sinksSolid-State Electronics, 1989
- Efficient fundamental frequency oscillation from millimetre-wave indium phosphide n + - n - n + transferred electron oscillatorsElectronics Letters, 1981