Design, fabrication and evaluation of tunnel transit-time diodes for V-band and W-band power generation
- 2 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Characterization of W-Band CW Tunnett DiodePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1991
- Electron properties in GaAs for the design of MM-wave IMPATTsInternational Journal of Infrared and Millimeter Waves, 1991
- Tunnel transit‐time (tunnett) devices for terahertz sourcesMicrowave and Optical Technology Letters, 1991
- Temperature dependence of electron saturation velocity in GaAsElectronics Letters, 1990
- GaAs W-band impatt diodes for very low-noise oscillatorsElectronics Letters, 1990
- Single-drift flat-profile GaAs impatt diodes at 90 GHzElectronics Letters, 1986
- Submillimeter Wave Oscillation from GaAs Tunnett DiodePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1979