Light-induced changes of the 1/fnoise in hydrogenated amorphous silicon
- 15 April 1993
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 47 (16) , 10903-10906
- https://doi.org/10.1103/physrevb.47.10903
Abstract
The 1/f-noise power spectra of coplanar current fluctuations in n-type doped hydrogenated amorphous silicon (a-Si:H) are measured before and after light-induced metastable defects (the Staebler-Wronski effect) are created. The noise spectral density for the annealed state is strongly non-Gaussian, with large correlations of the noise power between differing octaves. Upon illumination the noise becomes Gaussian and the correlation coefficients of the noise power decrease, which is consistent with an increase in the disorder at the mobility edge in a-Si:H in the light-soaked state.Keywords
This publication has 20 references indexed in Scilit:
- Conductance-noise power fluctuations in hydrogenated amorphous siliconPhysical Review Letters, 1992
- Atomistic origins of light-induced defects ina-SiPhysical Review Letters, 1992
- Nonlinear 1/fnoise in amorphous siliconPhysical Review Letters, 1991
- Random telegraph-switching noise in coplanar current measurements of amorphous siliconPhysical Review B, 1991
- Potential fluctuations due to inhomogeneity in hydrogenated amorphous silicon and the resulting charged dangling-bond defectsPhysical Review B, 1990
- Exploratory observations of random telegraphic signals and noise in homogeneous hydrogenated amorphous siliconJournal of Applied Physics, 1990
- Light-induced metastable defects in hydrogenated amorphous silicon: A systematic studyPhysical Review B, 1985
- Optically Induced Potential Fluctuations in a‐Si:H FilmsPhysica Status Solidi (b), 1982
- Optically induced conductivity changes in discharge-produced hydrogenated amorphous siliconJournal of Applied Physics, 1980
- Reversible conductivity changes in discharge-produced amorphous SiApplied Physics Letters, 1977