Interface properties of the Si(100)–SiO2 system formed by rapid thermal oxidation
- 1 April 2000
- journal article
- research article
- Published by Elsevier in Microelectronics Reliability
- Vol. 40 (4-5) , 645-648
- https://doi.org/10.1016/s0026-2714(99)00270-x
Abstract
No abstract availableKeywords
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