Potential fluctuations due to Pb centres at the interface

This publication has 10 references indexed in Scilit:

• Conductance measurements on P b centers at the (111) Si:SiO2 interface
  Journal of Applied Physics, 1996
• Radiation hardness of N2O grown oxynitrides assessed using the conductance technique
  Applied Physics Letters, 1996
• Hot-electron induced passivation of silicon dangling bonds at the Si(111)/SiO2 interface
  Applied Physics Letters, 1996
• Atomic hydrogen reactions withPbcenters at the (100) Si/SiO2interface
  Physical Review Letters, 1994
• Measured intrinsic defect density throughout the entire band gap at the Si/SiO₂interface
  Semiconductor Science and Technology, 1992
• Separation of two distinct fast interface state contributions at the (100)Si/SiO2 interface using the conductance technique
  Applied Physics Letters, 1992
• Possible observation of Pb0 and Pb1 centers at irradiated (100)Si/SiO2 interface from electrical measurements
  Applied Physics Letters, 1991
• MOS interface states: overview and physicochemical perspective
  Semiconductor Science and Technology, 1989
• Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise
  Advances in Physics, 1989
• Strain broadening of the dangling-bond resonance at the (111)Si-SiO2interface
  Physical Review B, 1986