Microwave mixer and detector diodes
- 1 January 1971
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 59 (8) , 1182-1190
- https://doi.org/10.1109/proc.1971.8363
Abstract
Recent advances in microwave mixer and detector diodes are reviewed. Devices considered are germanium back diodes, silicon and gallium arsenide point-contact diodes, and Schottky-barrier diodes. Current work on low-barrier (n-type) Schottky diodes and high-burnout point-contact diodes is also described. Experimental results of CW and RF pulse burnout of these devices are summarized. Different approaches to improve the power-handling capability of Schottky diodes at S-, X-, and Ku-band frequencies are considered.Keywords
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