Diffusion behaviour of Pb in high dose implanted silicon layers during isothermal annealing

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Abstract
High depth resolution Rutherford backscattering (RBS) has been employed to investigate the diffusion behaviour of Pb in high dose implanted (111) Si during isothermal annealing. Results indicate that rapid Pb outdiffusion accompanies the recrystallization of surface layers rendered amorphous by high dose Pb implantation. The timescale of the rapid outdiffusion process, which may be related to the period of recrystallization of the amorphous layers has been found to be about 110 minutes for 80 keV, 1016” cm−2 and 5 × 1015 cm”: Pb-implanted (111) Si layers isothermally annealed at 565°C. Following an initial dead time, during which no diffusion occurs, the subsequent initial rate of Pb outdiffusion apparently increases linearly with implantation dose. The “dead” time was observed to vary with annealing temperature in the range 500–600°C.