Impact of NBTI on the temporal performance degradation of digital circuits
Top Cited Papers
- 18 July 2005
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 26 (8) , 560-562
- https://doi.org/10.1109/led.2005.852523
Abstract
Negative bias temperature instability (NBTI) has become one of the major causes for reliability degradation of nanoscale circuits. In this letter, we propose a simple analytical model to predict the delay degradation of a wide class of digital logic gate based on both worst case and activity dependent threshold voltage change under NBTI. We show that by knowing the threshold voltage degradation of a single transistor due to NBTI, one can predict the performance degradation of a circuit with a reasonable degree of accuracy. We find that digital circuits are much less sensitive (approximately 9.2% performance degradation in ten years for 70 nm technology) to NBTI degradation than previously anticipated.Keywords
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