Role of Hydrogen in Atomic Layer Epitaxy of GaAs Using GaCl3
- 1 December 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (12B) , L1730-1732
- https://doi.org/10.1143/jjap.31.l1730
Abstract
Effects of hydrogen on chloride atomic layer epitaxy (ALE) of GaAs using GaCl3 were studied using He carrier gas and solid arsenic. It was found that some gallium chloride complexes adsorb on the GaAs surface even during H2 purging, and the desorption of Cl atoms only occurs when arsenic is supplied as AsH3 or arsenic vapor with H2. However, since partial pressure of GaCl3 is quite different in ordinary chloride ALE, those results may not be directly applied to ordinary chloride ALE using GaCl.Keywords
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