Low temperature growth of GaAs and AlAs by direct reaction between GaCl3, AlCl3 and AsH3
- 1 September 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 113 (3-4) , 491-498
- https://doi.org/10.1016/0022-0248(91)90084-i
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 18 references indexed in Scilit:
- Atomic Layer Epitaxy of GaAs Using GaCl3 and AsH3Japanese Journal of Applied Physics, 1990
- Deposition of high quality GaAs films at fast rates in the LP-CVD systemJournal of Crystal Growth, 1989
- Vapor Phase Epitaxy of AlGaAs by Direct Reaction between AlCl3, GaCl3 and AsH3/H2Japanese Journal of Applied Physics, 1989
- Preparation of High-Tc Tl-Ba-Ca-Cu-O SuperconductorsJapanese Journal of Applied Physics, 1988
- Chloride VPE of AlxGa1-xAs by the Hydrogen Reduction Method Using a Metal Al SourceJapanese Journal of Applied Physics, 1988
- Vapor Phase Epitaxial Growth of AlAs by Chloride Transport MethodJournal of the Electrochemical Society, 1987
- Thermodynamic analysis of the MOVPE growth of quaternary III–V alloy semiconductorsJournal of Crystal Growth, 1986
- Photoexcitation Effects on the Growth Rate in the Vapor Phase Epitaxial Growth of GaAsJournal of the Electrochemical Society, 1985
- Molecular Layer EpitaxyJournal of the Electrochemical Society, 1985
- Reaction Equilibria in the Growth of GaAs and GaP by the Chloride Transport ProcessJournal of the Electrochemical Society, 1970