Epitaxial Growth of GaAs at One to Two Monolayers per Cycle by Alternate Supply of GaCl3 and AsH3

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Abstract
Atomic layer growth of GaAs using GaCl3 and AsH3 was carefully investigated. Precise measurements revealed that the growth rate depended on the growth temperature and increased from 1 monolayer/cycle at 300°C to nearly 2 monolayers/cycle at 450°C for alternating supply of GaCl3 and AsH3, contrary to what we had previously reported. When the growth temperature was less than 300°C, GaAs deposited both on a GaAs substrate and on the SiO2 mask and the growth rate was about 0.7 monolayers/cycle. Raman spectra of the grown layers indicated that GaAs grown at above 300°C was a single crystal but that GaAs deposited below 300°C was polycrystalline.