Theory of dopant diffusion assuming nondilute concentrations of dopant-defect pairs
- 23 December 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (26) , 3488-3489
- https://doi.org/10.1063/1.105662
Abstract
Current dopant diffusion theory is based on dopant‐point‐defect interaction, and assumes that the number of dopant‐defect pairs is much smaller than the unpaired dopant concentration. In cases where a large number of excess defects are created from implantation damage, this may no longer be a valid assumption. A new derivation of the dopant and defect equations is presented which is valid for any concentration of dopant‐defect pairs.Keywords
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