Effect of Si doping in AlAs barrier layers of AlAs-GaAs-AlAs double-barrier resonant tunneling diodes
- 7 August 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (6) , 572-574
- https://doi.org/10.1063/1.101836
Abstract
AlAs-GaAs-AlAs double-barrier resonant tunneling diodes (DBRTDs) with different doping levels in the AlAs layers have been investigated. Two-step spacer layers were used in all samples. Peak-to-valley current ratios (PVCRs) as high as 3.5 (11.3), 3.5 (11.3), and 2.7 (8.2) were observed at 300 K (77 K) for samples with undoped, 1.2×1017 cm−3, and 3×1018 cm−3 doped AlAs barriers, respectively. These results indicate that resonant tunneling is not strongly affected by ionized Si atoms in the AlAs barriers. The excellent PVCRs observed in DBRTDs with two-step spacer layers is not because of low background impurity densities in the active region, but because of a third barrier formed by band bending in the spacer layers.Keywords
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