Defect Structure of MEV Si Implantation in GaAs

This publication has 11 references indexed in Scilit:

• Fully implanted GaAs millimetre-wave mixer diode using high energy implantation
  Electronics Letters, 1987
• Ion-implanted GaAs slow wave monolithic structure
  Solid-State Electronics, 1987
• MeV-energy B+, P+ and As+ ion implantation into Si
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
• Atomic Profiles of High Energy (MeV) Si Implanted into GaAs
  MRS Proceedings, 1987
• Damage calculation and measurement for GaAs amorphized by Si implantation
  Applied Physics Letters, 1986
• Relationship between secondary defects and electrical activation in ion-implanted, rapidly annealed GaAs
  Applied Physics Letters, 1986
• MeV Si implantation in GaAs
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
• Damage induced through megavolt arsenic implantation into silicon
  Applied Physics Letters, 1982
• A Monte Carlo computer program for the transport of energetic ions in amorphous targets
  Nuclear Instruments and Methods, 1980
• TEM structural studies on Se⁺implanted GaAs
  Radiation Effects, 1979