Enhanced luminescence efficiency due to exciton localization in self-assembled InGaN/GaN quantum dots
- 8 February 2000
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 113 (9) , 495-498
- https://doi.org/10.1016/s0038-1098(99)00531-1
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
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