Leakage mechanisms of titanium silicided n+/p junctions fabricated using rapid thermal processing
- 25 March 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (12) , 1280-1282
- https://doi.org/10.1063/1.104336
Abstract
We report a physical analysis of the reverse leakage currents observed in titanium silicided n+/p junctions fabricated using rapid thermal processing. By studying the dependence of currents on temperature, bias voltage, and diode geometry, we have been able to identify the leakage mechanisms. A defect level at Ev+0.30 eV, detected in concentrations ≳1014 cm−3, is shown to be responsible for a low leakage current component, through a generation‐recombination mechanism. Silicide asperities protruding through the metallurgical junction are proposed to account for the tunneling nature of a second, high leakage, distribution of currents.Keywords
This publication has 9 references indexed in Scilit:
- Soft breakdown in titanium-silicided shallow source/drain junctionsIEEE Electron Device Letters, 1990
- Optimization of a self-aligned titanium silicide process for submicron technologyIEEE Transactions on Semiconductor Manufacturing, 1990
- Titanium diffusion in siliconApplied Physics Letters, 1988
- A study of the leakage mechanisms of silicided n+/p junctionsJournal of Applied Physics, 1988
- Effect of post-silicidation annealing on TiSi2/p+-n Si junctionsJournal of Applied Physics, 1987
- Junction leakage in titanium self-aligned silicide devicesApplied Physics Letters, 1986
- Correlation Between Ti-Silicided Shallow Junction Diode Leakage and Titaniun Diffusion during TISI2 FornationMRS Proceedings, 1986
- Development of the Self-Aligned Titanium Silicide Process for VLSI ApplicationsIEEE Journal of Solid-State Circuits, 1985
- Electronic Defects in Silicon after Transient Isothermal AnnealingMRS Proceedings, 1983