Refractive indices of In0.49Ga0.51−xAlxP lattice matched to GaAs
- 1 February 1986
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 59 (3) , 985-986
- https://doi.org/10.1063/1.336581
Abstract
The refractive indices of In0.49Ga0.51P, In0.49Al0.51P, and In0.49Ga0.29Al0.22P, lattice matched to GaAs grown by molecular‐beam epitaxy, are determined from double‐beam reflectance measurements for photon energies ranging from 0.6 to 1.3 eV. Variation of the In0.49Ga0.51−xAlxP, refractive index with Al composition x and photon energy is calculated according to the single‐effective‐oscillator model. These analytical results are then compared with experimental data.This publication has 10 references indexed in Scilit:
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