Shallow junctions for ULSI technology
- 1 March 1990
- journal article
- research article
- Published by Wiley in European Transactions on Telecommunications
- Vol. 1 (2) , 159-165
- https://doi.org/10.1002/ett.4460010214
Abstract
No abstract availableKeywords
This publication has 31 references indexed in Scilit:
- Optimization of the germanium preamorphization conditions for shallow-junction formationIEEE Transactions on Electron Devices, 1988
- Transient boron diffusion in ion-implanted crystalline and amorphous siliconJournal of Applied Physics, 1988
- Electrical characterization of p+/n shallow junctions obtained by boron implantation into preamorphized siliconSolid-State Electronics, 1986
- Transient enhanced diffusion of dopants in silicon induced by implantation damageApplied Physics Letters, 1986
- Influence of Damage Depth Profile on the Characteristics of Shallow p+/n Implanted JunctionsPhysica Status Solidi (a), 1986
- Effect of the annealing conditions on the electrical characteristics of p+/n shallow junctionsIEEE Electron Device Letters, 1984
- Generalized scaling theory and its application to a ¼ micrometer MOSFET designIEEE Transactions on Electron Devices, 1984
- Channeling in low energy boron ion implantationApplied Physics Letters, 1984
- Boron, fluorine, and carrier profiles for B and BF2 implants into crystalline and amorphous SiJournal of Applied Physics, 1983
- Channeling effect of low energy boron implant inIEEE Electron Device Letters, 1983