Secondary electron emission from the GaN:Cs–O surface
- 15 November 1974
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 25 (10) , 549-551
- https://doi.org/10.1063/1.1655305
Abstract
High secondary emission ratios have been obtained for the GaN:CsO surface. A peak ratio of 51 at 3 keV primary electron energy has been observed. At 20 keV the ratio is 24, compared with 2 when the GaN is uncesiated. Analysis of the data indicates that the diffusion length in the material is between 300 and 800 Å, and the surface escape probability for secondary electrons is 0.36. These results indicate that the GaN:CsO surface has been activated to negative electron affinity (NEA).Keywords
This publication has 22 references indexed in Scilit:
- Photoemission from GaNApplied Physics Letters, 1974
- CsF, Cs as a low work function layer on the GaAs photocathodePhysica Status Solidi (a), 1970
- Liquid Epitaxial Growth of GaAsSb and Its Use as a High-Efficiency, Long-Wavelength Threshold PhotoemitterJournal of Applied Physics, 1970
- InAsP–Cs2O, A HIGH-EFFICIENCY INFRARED-PHOTOCATHODEApplied Physics Letters, 1970
- GaAs1−xPx AS A NEW HIGH QUANTUM YIELD PHOTOEMISSIVE MATERIAL FOR THE VISIBLE SPECTRUMApplied Physics Letters, 1969
- Photoemission from GaAs-Cs-OJournal of Physics D: Applied Physics, 1968
- PHOTOEMISSION FROM InP-Cs-OApplied Physics Letters, 1968
- Improved photoemitters using GaAs and InGaAsProceedings of the IEEE, 1968
- Direct Measurement of Hot Electron-Phonon Interactions in GaPPhysical Review Letters, 1967
- GaAs-Cs: A new type of photoemitterSolid State Communications, 1965