High-energy electron induced gain degradation in bipolar junction transistors
- 1 September 2006
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 251 (1) , 157-162
- https://doi.org/10.1016/j.nimb.2006.05.028
Abstract
No abstract availableKeywords
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