Physically based comparison of hot-carrier-induced and ionizing-radiation-induced degradation in BJTs
- 1 March 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 42 (3) , 436-444
- https://doi.org/10.1109/16.368041
Abstract
No abstract availableKeywords
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