Hydrogen and chlorine detection at the SiO2/Si interface
- 31 December 1981
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research
- Vol. 191 (1-3) , 91-95
- https://doi.org/10.1016/0029-554x(81)90989-7
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Hydrogen ratios and profiles in deposited amorphous and polycrystalline films and in metals using nuclear techniquesNuclear Instruments and Methods, 1980
- The Role of Hydrogen in SiO2 Films on SiliconJournal of the Electrochemical Society, 1979
- On the determination of diffusion lengths by means of angle-lapped P-N junctionsSolid-State Electronics, 1979
- Chlorine Concentration Profiles in O 2 / HCl and H 2 O / HCl Thermal Silicon Oxides Using SIMS MeasurementsJournal of the Electrochemical Society, 1978
- Depth profiling of sodium in SiO2 films by secondary ion mass spectrometryApplied Physics Letters, 1978
- Secondary ion quadrupole mass spectrometer for depth profiling—design and performance evaluationReview of Scientific Instruments, 1978
- Hydrogen concentration profiles in quartz determined by a nuclear reaction techniquePhysics and Chemistry of Minerals, 1978
- The use of nuclear reactions and SIMS for quantitative depth profiling of hydrogen in amorphous siliconApplied Physics Letters, 1977
- Properties of SiO2 Grown in the Presence of HCl or Cl2Journal of the Electrochemical Society, 1975
- Range and stopping-power tables for heavy ionsAtomic Data and Nuclear Data Tables, 1970