Deep Ultraviolet AlGaInN-Based Light-Emitting Diodes on Si(111) and Sapphire
- 1 August 2002
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 192 (2) , 286-291
- https://doi.org/10.1002/1521-396x(200208)192:2<286::aid-pssa286>3.0.co;2-2
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- AlGaInN-based ultraviolet light-emitting diodes grown on Si(111)Applied Physics Letters, 2002
- Ultraviolet light-emitting diodes at 340 nm using quaternary AlInGaN multiple quantum wellsApplied Physics Letters, 2001
- Stripe Geometry Ultraviolet Light Emitting Diodes at 305 Nanometers Using Quaternary AlInGaN Multiple Quantum WellsJapanese Journal of Applied Physics, 2001
- Growth and Optical Properties of Quaternary InAlGaN for 300 nm Band UV-Emitting DevicesPhysica Status Solidi (a), 2001
- Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaNApplied Physics Letters, 2001
- Milliwatt operation of AlGaN-based single-quantum-well light emitting diode in the ultraviolet regionApplied Physics Letters, 2001
- High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 2001
- Room-temperature operation at 333 nm of Al0.03Ga0.97N/Al0.25Ga0.75N quantum-well light-emitting diodes with Mg-doped superlattice layersApplied Physics Letters, 2000
- Increased Electrical Activity of Mg-Acceptors in AlxGa1-xN/GaN SuperlatticesJapanese Journal of Applied Physics, 1999
- Enhanced Mg doping efficiency in Al0.2Ga0.8N/GaN superlatticesApplied Physics Letters, 1999