Atomic bonding at the SiAu and SiCu interfaces
- 1 December 1986
- journal article
- Published by Elsevier in Surface Science
- Vol. 178 (1-3) , 64-69
- https://doi.org/10.1016/0039-6028(86)90281-5
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Atomic structure of the Cu/Si(111) interface by high-energy core-level Auger electron diffractionPhysical Review B, 1985
- Electronic properties on silicon-transition metal interface compoundsSurface Science Reports, 1985
- 7 × 7 Si(111)Cu interfaces: Combined LEED, AES and EELS measurementsSurface Science, 1985
- Agglomeration at Si/Au interfaces: A study with spatially resolved Auger line-shape spectroscopyPhysical Review B, 1984
- Low temperature reactions at Si/metal interfaces; What is going on at the interfaces?Surface Science Reports, 1983
- Compound formation and bonding configuration at the Si-Cu interfacePhysical Review B, 1983
- Low-energy electron-loss spectroscopy and Auger-electron-spectroscopy studies of noble-metal—silicon interfaces: Si-Au systemPhysical Review B, 1982
- Electron energy loss measurements on the gold-silicon interface.Journal de Physique Lettres, 1980
- Photoemission studies of the silicon-gold interfacePhysical Review B, 1979
- Isothermal desorption spectroscopy for the study of two-dimensional condensed phases: Investigation of the Au (deposit)/Si(111) (substrate) system; application to the Xe/(0001)graphite systemSurface Science, 1977