Dependence of doping on substrate orientation for GaAs: C grown by OMVPE
- 1 April 1992
- journal article
- other
- Published by Elsevier in Journal of Crystal Growth
- Vol. 118 (3-4) , 467-469
- https://doi.org/10.1016/0022-0248(92)90097-3
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Tin-doping ofn + InP OMVPE layersJournal of Electronic Materials, 1991
- Orientation dependence of S, Zn, Si, Te, and Sn doping in OMCVD growth of InP and GaAs: application to DH lasers and lateral p—n junction arrays grown on non-planar substratesJournal of Crystal Growth, 1991
- Carbon tetrachloride doped Al x Ga1−x As grown by metalorganic chemical vapor depositionJournal of Electronic Materials, 1990
- Orientation dependent amphoteric behavior of group IV impurities in the molecular beam epitaxial and vapor phase epitaxial growth of GaAsJournal of Crystal Growth, 1989
- Carbon incorporation in metalorganic chemical vapor deposition (Al,Ga)As films grown on (100), (311)A, and (311)B oriented GaAs substratesApplied Physics Letters, 1987
- The role of impurities in III/V semiconductors grown by organometallic vapor phase epitaxyJournal of Crystal Growth, 1986
- Mechanism of carbon incorporation in MOCVD GaAsJournal of Crystal Growth, 1984
- Electrical properties of epitaxial indium phosphide films grown by metalorganic chemical vapor depositionJournal of Applied Physics, 1981