Carbon tetrachloride doped Al x Ga1−x As grown by metalorganic chemical vapor deposition
- 1 April 1990
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 19 (4) , 331-335
- https://doi.org/10.1007/bf02651293
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Carbon diffusion in undoped, n-type, and p-type GaAsApplied Physics Letters, 1989
- Heavy carbon doping of metalorganic chemical vapor deposition grown GaAs using carbon tetrachlorideApplied Physics Letters, 1989
- Secondary ion mass spectroscopy depth profiles of heterojunction bipolar transistor emitter-base heterojunctions grown by low pressure OMVPEJournal of Crystal Growth, 1988
- Controlled carbon doping of GaAs by metalorganic vapor phase epitaxyApplied Physics Letters, 1988
- Investigation of carbon incorporation in GaAs using13C-enriched trimethylarsenic and13Ch4Journal of Electronic Materials, 1988
- Carbon-doped AlxGa1−xAs-GaAs quantum well lasersApplied Physics Letters, 1988
- Properties of high-purity AlxGa1−xAs grown by the metalorganic vapor-phase-epitaxy technique using methyl precursorsJournal of Applied Physics, 1987
- Carbon incorporation in metalorganic chemical vapor deposition (Al,Ga)As films grown on (100), (311)A, and (311)B oriented GaAs substratesApplied Physics Letters, 1987
- Mechanism of carbon incorporation in MOCVD GaAsJournal of Crystal Growth, 1984
- Gas Phase α,α Elimination of Hydrogen Halides from Halomenthanes. I. Thermal Decomposition of Chlorodifluoromethane, Trifluoromethane, and Trichloromethane Behind Shock WavesBerichte der Bunsengesellschaft für physikalische Chemie, 1979