The effect of the growth procedure and the InAs amount on the formation of strain-induced islands in the InAs/InP(001) system
- 1 January 1998
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 123-124, 751-756
- https://doi.org/10.1016/s0169-4332(97)00523-0
Abstract
No abstract availableThis publication has 20 references indexed in Scilit:
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